UF3C120080K4S
UnitedSiC
UnitedSiC
SICFET N-CH 1200V 33A TO247-4
$15.94
Available to order
Reference Price (USD)
1+
$15.94000
500+
$15.7806
1000+
$15.6212
1500+
$15.4618
2000+
$15.3024
2500+
$15.143
Exquisite packaging
Discount
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Optimize your electronic systems with UF3C120080K4S, a high-quality Transistors - FETs, MOSFETs - Single from UnitedSiC. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, UF3C120080K4S provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 254.2W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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