UF3SC065040B7S
UnitedSiC
UnitedSiC
650V/40MOHM, SIC, STACKED FAST C
$13.54
Available to order
Reference Price (USD)
1+
$13.54000
500+
$13.4046
1000+
$13.2692
1500+
$13.1338
2000+
$12.9984
2500+
$12.863
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover UF3SC065040B7S, a versatile Transistors - FETs, MOSFETs - Single solution from UnitedSiC, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 195W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
Rohm Semiconductor
RS3L110ATTB1
Rohm Semiconductor
RQ3E160ADTB
Micro Commercial Co
2N7002KW-TP
Fairchild Semiconductor
HUFA76645S3ST
Infineon Technologies
IRLML6346TRPBF
STMicroelectronics
STW35N60DM2
Texas Instruments
CSD17578Q3AT
Fairchild Semiconductor
FDS2170N3
Diodes Incorporated
BSS123WQ-7-F
Nexperia USA Inc.