UF4SC120023K4S
UnitedSiC
UnitedSiC
1200V/23MOHM SIC STACKED FAST CA
$32.33
Available to order
Reference Price (USD)
1+
$32.33000
500+
$32.0067
1000+
$31.6834
1500+
$31.3601
2000+
$31.0368
2500+
$30.7135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance UF4SC120023K4S from UnitedSiC, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, UF4SC120023K4S delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 385W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
Related Products
Infineon Technologies
IPAW60R600P7SXKSA1
Diodes Incorporated
DMPH4023SK3Q-13
IXYS
IXFH320N10T2
Diodes Incorporated
ZXMP10A17E6QTA
onsemi
NTMJS2D5N06CLTWG
Diodes Incorporated
DMN2300U-7
STMicroelectronics
STD3NK80ZT4
Nexperia USA Inc.
BUK9M85-60EX
Vishay Siliconix
SIR880BDP-T1-RE3
Vishay Siliconix