UMD6NFHATR
Rohm Semiconductor
Rohm Semiconductor
PNP+NPN DIGITAL TRANSISTOR (WITH
$0.51
Available to order
Reference Price (USD)
1+
$0.51000
500+
$0.5049
1000+
$0.4998
1500+
$0.4947
2000+
$0.4896
2500+
$0.4845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience precision engineering with Rohm Semiconductor's UMD6NFHATR Bipolar Junction Transistor Arrays, the optimal solution for space-efficient designs. These pre-biased components eliminate external resistor needs while providing predictable performance in amplification and switching roles. Application sectors include automotive electronics, power tools, and renewable energy systems where reliability is paramount. The product family offers multiple configuration options, all featuring low quiescent current, high gain bandwidth product, and robust EMC performance. Rohm Semiconductor provides comprehensive technical resources for UMD6NFHATR integration. Take the next step request a quote or design consultation through our convenient inquiry portal!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
Related Products
Panasonic Electronic Components
NP043A200A
onsemi
MUN5213DW1T1
Rohm Semiconductor
EMB2FHAT2R
onsemi
NSBC114EDXV6T5G
Toshiba Semiconductor and Storage
RN2707JE(TE85L,F)
Diodes Incorporated
DDA124EH-7
Panasonic Electronic Components
XP0421200L
Nexperia USA Inc.
PEMH10,115
Diodes Incorporated
UMC5NQ-7
Toshiba Semiconductor and Storage