UMH33NTN
Rohm Semiconductor
Rohm Semiconductor
NPN+NPN, SOT-363, DUAL DIGITAL T
$0.19
Available to order
Reference Price (USD)
1+
$0.19387
500+
$0.1919313
1000+
$0.1899926
1500+
$0.1880539
2000+
$0.1861152
2500+
$0.1841765
Exquisite packaging
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Introducing Rohm Semiconductor's UMH33NTN advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. Rohm Semiconductor stands behind every UMH33NTN unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 400mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 35MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
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