VB20120C-E3/4W
Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 120V TO263
$0.85
Available to order
Reference Price (USD)
1,000+
$0.86537
Exquisite packaging
Discount
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Experience unparalleled performance with the VB20120C-E3/4W from Vishay General Semiconductor - Diodes Division, a key player in the Diodes - Rectifiers - Arrays segment of Discrete Semiconductor Products. These diodes are engineered for precision and durability, offering features such as fast recovery time and high current density. The VB20120C-E3/4W is perfect for applications requiring reliable rectification and array configurations. Vishay General Semiconductor - Diodes Division ensures every product meets stringent quality controls. Contact us today to request a sample or to discuss bulk purchase options!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700 µA @ 120 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)