VMO580-02F
IXYS
IXYS
MOSFET N-CH 200V 580A Y3-LI
$169.40
Available to order
Reference Price (USD)
1+
$133.09000
10+
$124.39600
25+
$120.04640
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover VMO580-02F, a versatile Transistors - FETs, MOSFETs - Single solution from IXYS, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V
- Vgs(th) (Max) @ Id: 4V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Y3-Li
- Package / Case: Y3-Li
Related Products
Infineon Technologies
BSS119NH6327XTSA1
Vishay Siliconix
SI6415DQ-T1-GE3
Vishay Siliconix
SI1401EDH-T1-BE3
Panjit International Inc.
PJQ2416_R1_00001
onsemi
FDD6630A
IXYS
IXTH140N075L2
Nexperia USA Inc.
PSMN013-30MLC,115
Vishay Siliconix
2N7002E-T1-GE3
IXYS
IXTR20P50P
Vishay Siliconix