VS-40MT120PHAPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
MTP - HALF BRIDGE IGBT
$63.77
Available to order
Reference Price (USD)
1+
$63.77000
500+
$63.1323
1000+
$62.4946
1500+
$61.8569
2000+
$61.2192
2500+
$60.5815
Exquisite packaging
Discount
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Vishay General Semiconductor - Diodes Division's VS-40MT120PHAPBF IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Vishay General Semiconductor - Diodes Division for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 305 W
- Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 40A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 12-MTP Module
- Supplier Device Package: 12-MTP
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