VS-FC420SA10
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 435A SOT227
$25.37
Available to order
Reference Price (USD)
1+
$23.06000
10+
$21.27100
100+
$18.16400
500+
$16.73000
Exquisite packaging
Discount
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Boost your electronic applications with VS-FC420SA10, a reliable Transistors - FETs, MOSFETs - Single by Vishay General Semiconductor - Diodes Division. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, VS-FC420SA10 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 435A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.15mOhm @ 200A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 17300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 652W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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