VS-GT300YH120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 341A INT-A-PAK
$208.02
Available to order
Reference Price (USD)
12+
$171.46250
Exquisite packaging
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Vishay General Semiconductor - Diodes Division's VS-GT300YH120N IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 341 A
- Power - Max: 1042 W
- Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ)
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 36 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 8)
- Supplier Device Package: Double INT-A-PAK
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