XPH4R10ANB,L1XHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 70A 8SOP
$2.37
Available to order
Reference Price (USD)
1+
$2.37000
500+
$2.3463
1000+
$2.3226
1500+
$2.2989
2000+
$2.2752
2500+
$2.2515
Exquisite packaging
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Experience the power of XPH4R10ANB,L1XHQ, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, XPH4R10ANB,L1XHQ is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 170W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-SOIC (0.197", 5.00mm Width)
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