Shopping cart

Subtotal: $0.00

YJB200G06B-F2-0000HF

Yangzhou Yangjie Electronic Technology Co.,Ltd
YJB200G06B-F2-0000HF Preview
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 200A TO-263
$1.88
Available to order
Reference Price (USD)
1+
$1.88000
500+
$1.8612
1000+
$1.8424
1500+
$1.8236
2000+
$1.8048
2500+
$1.786
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Texas Instruments

TPS1101PWR

Fairchild Semiconductor

FQA13N50CF

Infineon Technologies

IPN60R600P7SATMA1

Infineon Technologies

IPP034N03LG

Fairchild Semiconductor

FDG314P

Toshiba Semiconductor and Storage

TK6P53D(T6RSS-Q)

Infineon Technologies

ISC012N04NM6ATMA1

Infineon Technologies

IRFH5006TRPBF

Top