ZVNL120GTA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 200V 320MA SOT223
$1.03
Available to order
Reference Price (USD)
1,000+
$0.46550
2,000+
$0.42632
5,000+
$0.40019
10,000+
$0.38713
25,000+
$0.38000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with ZVNL120GTA, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, ZVNL120GTA provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-4, TO-261AA
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