ZXMN2A04DN8TC
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 5.9A 8SOIC
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic applications with Diodes Incorporated s ZXMN2A04DN8TC, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of ZXMN2A04DN8TC today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.9A
- Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
Related Products
Rohm Semiconductor
MP6K12TCR
Vishay Siliconix
SI7842DP-T1-E3
Alpha & Omega Semiconductor Inc.
AO4826
Alpha & Omega Semiconductor Inc.
AON5802B_101
Infineon Technologies
IRF7555TR
Rohm Semiconductor
SP8M9FU6TB
Vishay Siliconix
SI1972DH-T1-E3
Infineon Technologies
BSO615CGHUMA1
Monolithic Power Systems Inc.
LN60A01ES-LF
Vishay Siliconix