ZXMN6A08KTC
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 5.36A TO252-3
$0.65
Available to order
Reference Price (USD)
2,500+
$0.29618
5,000+
$0.27803
12,500+
$0.26895
25,000+
$0.26400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with ZXMN6A08KTC, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, ZXMN6A08KTC meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5.36A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.12W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IRFR3410TRLPBF
Microchip Technology
APT12057B2LLG
Infineon Technologies
IPP60R210CFD7XKSA1
Infineon Technologies
IST015N06NM5AUMA1
STMicroelectronics
STD80N3LL
Infineon Technologies
IPB80N06S2L11ATMA2
Diodes Incorporated
DMN3042LFDF-13
Infineon Technologies
IPI65R310CFDXKSA1
Renesas Electronics America Inc
H5N2007FN-E
STMicroelectronics