ZXMN6A09KQTC
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 11.8A TO252
$0.79
Available to order
Reference Price (USD)
2,500+
$0.84250
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose ZXMN6A09KQTC by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with ZXMN6A09KQTC inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 10.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Diodes Incorporated
DMP4051LK3Q-13
Vishay Siliconix
SIS402DN-T1-GE3
Diodes Incorporated
DMP2070UQ-7
onsemi
NTBGS002N06C
Infineon Technologies
IPI80N06S208AKSA2
IXYS
IXFB100N50Q3
Infineon Technologies
IPB019N08N5ATMA1
onsemi
MCH3478-S-TL-H
Diodes Incorporated
DMP4047LFDE-7
onsemi