ZXMN6A11DN8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 2.5A 8-SOIC
$0.97
Available to order
Reference Price (USD)
500+
$0.54000
1,000+
$0.44100
2,500+
$0.40388
5,000+
$0.37913
12,500+
$0.36675
25,000+
$0.36000
Exquisite packaging
Discount
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Upgrade your electronic designs with Diodes Incorporated s ZXMN6A11DN8TA, a top-tier choice in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. Known for their durability and high efficiency, these components are essential for modern electronics. Key features include robust construction, low on-resistance, and fast switching capabilities. Ideal for use in power supplies, motor control, and audio amplifiers. Reach out to us now to learn more about how ZXMN6A11DN8TA can meet your specific needs and boost your application performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.5A
- Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Diodes Incorporated