ZXMP6A17GTA
Diodes Incorporated

Diodes Incorporated
MOSFET P-CH 60V 3A SOT223
$0.65
Available to order
Reference Price (USD)
1,000+
$0.29400
2,000+
$0.26925
5,000+
$0.25275
10,000+
$0.24450
25,000+
$0.24000
Exquisite packaging
Discount
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Boost your electronic applications with ZXMP6A17GTA, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, ZXMP6A17GTA meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-4, TO-261AA