ZXTN25012EFLTA
Diodes Incorporated
Diodes Incorporated
TRANS NPN 12V 2A SOT23-3
$0.44
Available to order
Reference Price (USD)
3,000+
$0.17361
6,000+
$0.16364
15,000+
$0.15366
30,000+
$0.15200
Exquisite packaging
Discount
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Optimize your designs with ZXTN25012EFLTA by Diodes Incorporated, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, ZXTN25012EFLTA is the perfect fit. Contact us today to learn more and place your order with Diodes Incorporated.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
- Power - Max: 350 mW
- Frequency - Transition: 260MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Diodes Incorporated