ZXTNS618MCTA
Diodes Incorporated
Diodes Incorporated
TRANS NPN 20V 4.5A DFN3020B-8
$0.49
Available to order
Reference Price (USD)
3,000+
$0.54442
6,000+
$0.52160
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose ZXTNS618MCTA by Diodes Incorporated for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, ZXTNS618MCTA is a versatile solution. Ready to order? Submit your inquiry today and let Diodes Incorporated provide the components you need.
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN + Diode (Isolated)
- Current - Collector (Ic) (Max): 4.5 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
- Power - Max: 3 W
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: DFN3020B-8
Related Products
Fairchild Semiconductor
BC556BTFR
Toshiba Semiconductor and Storage
2SC2712-Y,LXHF
Rohm Semiconductor
2SB1707TL
Microchip Technology
JANS2N3019
onsemi
NSCT817-25LT3G
Diodes Incorporated
FMMT491AQTA
Nexperia USA Inc.
PBSS5260QAZ
Diodes Incorporated
BC857BLP-7B
Microchip Technology
2N5415UA
Rohm Semiconductor