12A02SS-TL-E
onsemi
onsemi
BIP PNP 0.8A 12V
$0.07
Available to order
Reference Price (USD)
1+
$0.07000
500+
$0.0693
1000+
$0.0686
1500+
$0.0679
2000+
$0.0672
2500+
$0.0665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize signal clarity with 12A02SS-TL-E RF BJT transistors by onsemi. Featuring low distortion and high linearity, these components are perfect for high-sensitivity applications like medical imaging equipment and military communications. Their compact design allows for easy integration without compromising performance. Don t miss out inquire now for bulk discounts and technical specifications!
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
NXP USA Inc.
BLF6G20-180PN112
Infineon Technologies
BFP720FH6327
Infineon Technologies
BFP405FH6327
Rochester Electronics, LLC
RX1214B300YI
NXP USA Inc.
BLF6G20LS-180RN112
Microchip Technology
2N3496
Rochester Electronics, LLC
RZ1214B35YI
NXP Semiconductors
BFU550WF
Infineon Technologies
BFP720FE6327
onsemi