BFU550WF
NXP Semiconductors
NXP Semiconductors
BFU550W - NPN WIDEBAND SILICON R
$0.17
Available to order
Reference Price (USD)
10,000+
$0.13500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF designs with NXP Semiconductors's BFU550WF Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how BFU550WF can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
- Gain: 18dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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