RZ1214B35YI
Rochester Electronics, LLC
Rochester Electronics, LLC
RZ1214B35YI - MICROWAVE POWER TR
$270.40
Available to order
Reference Price (USD)
1+
$270.40000
500+
$267.696
1000+
$264.992
1500+
$262.288
2000+
$259.584
2500+
$256.88
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance RZ1214B35YI RF Bipolar Transistors from Rochester Electronics, LLC, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 60V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 7dB
- Power - Max: 125W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 3A
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-443A
- Supplier Device Package: SOT443A
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