2N6661
Microchip Technology
Microchip Technology
MOSFET N-CH 90V 350MA TO39
$16.57
Available to order
Reference Price (USD)
1+
$11.41000
25+
$10.46480
100+
$10.18050
Exquisite packaging
Discount
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Experience the power of 2N6661, a premium Transistors - FETs, MOSFETs - Single from Microchip Technology. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, 2N6661 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 90 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 24 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-39
- Package / Case: TO-205AD, TO-39-3 Metal Can
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