Shopping cart

Subtotal: $0.00

2N7002PV,115

Nexperia USA Inc.
2N7002PV,115 Preview
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.35A SOT-666
$0.42
Available to order
Reference Price (USD)
4,000+
$0.06600
8,000+
$0.05940
12,000+
$0.05280
28,000+
$0.04950
100,000+
$0.04290
200,000+
$0.04224
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Not For New Designs
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666

Related Products

Diodes Incorporated

DMT10H017LPD-13

Nexperia USA Inc.

PMDPB56XNEAX

Vishay Siliconix

SI7998DP-T1-GE3

Vishay Siliconix

SI5504BDC-T1-E3

Infineon Technologies

2N7002DWH6327XTSA1

Toshiba Semiconductor and Storage

SSM6L36FE,LM

Infineon Technologies

DF11MR12W1M1PB11BPSA1

Rohm Semiconductor

US6M2TR

Top