2SC3357-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
RF 0.1A, ULTRA HIGH FREQ BAND
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Discover high-performance 2SC3357-T1-A RF Bipolar Transistors from Renesas Electronics America Inc, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 6.5GHz
- Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
- Gain: 10dB
- Power - Max: 1.2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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