2SC6024-TL-E
onsemi
onsemi
BIP NPN 35MA 3.5V FT=14G
$0.07
Available to order
Reference Price (USD)
1+
$0.07000
500+
$0.0693
1000+
$0.0686
1500+
$0.0679
2000+
$0.0672
2500+
$0.0665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance 2SC6024-TL-E RF Bipolar Transistors from onsemi, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.5V
- Frequency - Transition: 14GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
- Gain: 9dB ~ 10.5dB
- Power - Max: 120mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 15mA, 3V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: 3-SSFP
Related Products
Diodes Incorporated
BFS17NQTA
Renesas Electronics America Inc
HFA3127BZ
MACOM Technology Solutions
MRF323
Central Semiconductor Corp
2N3866A PBFREE
Renesas
NE85639-T1-R27-A
onsemi
2SC5277A-2-TL-E
Infineon Technologies
BFP540ESDH6327XTSA1
MACOM Technology Solutions
MRF422
NTE Electronics, Inc
NTE229
NTE Electronics, Inc