BFS17NQTA
Diodes Incorporated
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23
$0.22
Available to order
Reference Price (USD)
3,000+
$0.24750
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF designs with Diodes Incorporated's BFS17NQTA Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how BFS17NQTA can enhance your projects!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 11V
- Frequency - Transition: 3.2GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 310mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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