NTE2633
NTE Electronics, Inc
NTE Electronics, Inc
T-NPN SI VIDEO DR 1GHZ TO-126
$1.39
Available to order
Reference Price (USD)
1+
$1.39000
500+
$1.3761
1000+
$1.3622
1500+
$1.3483
2000+
$1.3344
2500+
$1.3205
Exquisite packaging
Discount
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Discover high-performance NTE2633 RF Bipolar Transistors from NTE Electronics, Inc, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 95V
- Frequency - Transition: 1.2GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
- Current - Collector (Ic) (Max): 300mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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