2SK2729-E
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 500V 20A TO3P
$4.77
Available to order
Reference Price (USD)
1+
$4.77000
500+
$4.7223
1000+
$4.6746
1500+
$4.6269
2000+
$4.5792
2500+
$4.5315
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with 2SK2729-E, a high-quality Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, 2SK2729-E provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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