A3G26D055N-2110
NXP USA Inc.
NXP USA Inc.
RF REFERENCE CIRCUIT 25W 2110-22
$703.12
Available to order
Reference Price (USD)
1+
$703.12000
500+
$696.0888
1000+
$689.0576
1500+
$682.0264
2000+
$674.9952
2500+
$667.964
Exquisite packaging
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Discover high-performance A3G26D055N-2110 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Active
- Transistor Type: GaN
- Frequency: 100MHz ~ 2.69GHz
- Gain: 13.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 40 mA
- Power - Output: 8W
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (7x6.5)
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