AFGY100T65SPD
onsemi
onsemi
IGBT - 650 V 100 A FS3 FOR EV TR
$10.44
Available to order
Reference Price (USD)
1+
$10.44000
500+
$10.3356
1000+
$10.2312
1500+
$10.1268
2000+
$10.0224
2500+
$9.918
Exquisite packaging
Discount
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Choose AFGY100T65SPD Single IGBTs by onsemi for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. onsemi's reputation for quality makes AFGY100T65SPD a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
- Power - Max: 660 W
- Switching Energy: 5.1mJ (on), 2.7mJ (off)
- Input Type: Standard
- Gate Charge: 109 nC
- Td (on/off) @ 25°C: 36ns/78ns
- Test Condition: 400V, 100A, 5Ohm, 15V
- Reverse Recovery Time (trr): 105 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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