AIGB30N65F5ATMA1
Infineon Technologies
Infineon Technologies
DISCRETE SWITCHES
$4.31
Available to order
Reference Price (USD)
1+
$4.31000
500+
$4.2669
1000+
$4.2238
1500+
$4.1807
2000+
$4.1376
2500+
$4.0945
Exquisite packaging
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Optimize power control with AIGB30N65F5ATMA1 Single IGBTs from Infineon Technologies, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Infineon Technologies ensures AIGB30N65F5ATMA1 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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