AIKW50N65DF5XKSA1
Infineon Technologies
Infineon Technologies
IC DISCRETE 650V TO247-3
$9.66
Available to order
Reference Price (USD)
1+
$8.02000
10+
$7.24200
240+
$5.99575
720+
$5.22101
Exquisite packaging
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The AIKW50N65DF5XKSA1 Single IGBT by Infineon Technologies is a game-changer for energy-efficient systems. Ideal for HVAC, robotics, and power distribution, it boasts fast turn-off times and low gate drive requirements. Its advanced technology reduces energy waste and improves system longevity. Trust Infineon Technologies for premium-quality transistors backed by exceptional support. Request a sample or quote now to start your next innovation!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 270 W
- Switching Energy: 490µJ (on), 140µJ (off)
- Input Type: Standard
- Gate Charge: 1018 nC
- Td (on/off) @ 25°C: 21ns/156ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
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