AIKW50N65DH5XKSA1
Infineon Technologies
Infineon Technologies
IC DISCRETE 650V TO247-3
$9.66
Available to order
Reference Price (USD)
1+
$8.63000
10+
$7.85200
240+
$6.60525
720+
$5.83053
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The AIKW50N65DH5XKSA1 Single IGBT from Infineon Technologies delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Infineon Technologies's commitment to innovation ensures AIKW50N65DH5XKSA1 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 270 W
- Switching Energy: 490µJ (on), 140µJ (off)
- Input Type: Standard
- Gate Charge: 1018 nC
- Td (on/off) @ 25°C: 21ns/156ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
Related Products
Infineon Technologies
IRG4IBC20KDPBF
Rohm Semiconductor
RGTVX6TS65GC11
Microchip Technology
APT200GN60B2G
STMicroelectronics
STGWA75H65DFB2
Rohm Semiconductor
RGCL60TS60DGC11
onsemi
HGTD1N120BNS9A
STMicroelectronics
STGP20V60F
Infineon Technologies
IKB40N65EF5ATMA1
IXYS
IXGF20N300
Alpha & Omega Semiconductor Inc.