Shopping cart

Subtotal: $0.00

AOB11S65L

Alpha & Omega Semiconductor Inc.
AOB11S65L Preview
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 11A TO263
$1.65
Available to order
Reference Price (USD)
800+
$1.30845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 198W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Infineon Technologies

IRF6641TRPBF

Texas Instruments

CSD23280F3

NTE Electronics, Inc

NTE2381

Diodes Incorporated

DMT35M7LFV-7

Nexperia USA Inc.

PSMN4R2-30MLDX

Nexperia USA Inc.

BUK7M3R3-40HX

Rohm Semiconductor

R6035VNXC7G

Infineon Technologies

IRFIZ24NPBF

Rohm Semiconductor

RD3P050SNFRATL

Nexperia USA Inc.

PMH260UNEH

Top