PMH260UNEH
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 20V 1.2A DFN0606-3
$0.34
Available to order
Reference Price (USD)
1+
$0.34000
500+
$0.3366
1000+
$0.3332
1500+
$0.3298
2000+
$0.3264
2500+
$0.323
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with PMH260UNEH, a reliable Transistors - FETs, MOSFETs - Single by Nexperia USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PMH260UNEH meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 310mOhm @ 700mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN0606-3 (SOT8001)
- Package / Case: 3-XFDFN
Related Products
Toshiba Semiconductor and Storage
TPN11003NL,LQ
onsemi
3LP01SS-TL-H
IXYS
IXFX160N30T
STMicroelectronics
STL10N60M2
Fairchild Semiconductor
FQB7P06TM
IXYS
IXFA14N60P-TRL
Infineon Technologies
IPB47N10SL26ATMA1
Toshiba Semiconductor and Storage
TK6R9P08QM,RQ
Vishay Siliconix
SIHA24N80AE-GE3
Infineon Technologies