R6035VNXC7G
Rohm Semiconductor
Rohm Semiconductor
600V 17A TO-220FM, PRESTOMOS WIT
$6.09
Available to order
Reference Price (USD)
1+
$6.09000
500+
$6.0291
1000+
$5.9682
1500+
$5.9073
2000+
$5.8464
2500+
$5.7855
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose R6035VNXC7G by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with R6035VNXC7G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Rds On (Max) @ Id, Vgs: 114mOhm @ 8A, 15V
- Vgs(th) (Max) @ Id: 6.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 81W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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