DMTH6016LFDFWQ-7R
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 9.4A 6UDFN
$0.89
Available to order
Reference Price (USD)
3,000+
$0.36690
6,000+
$0.34441
15,000+
$0.33317
30,000+
$0.32704
Exquisite packaging
Discount
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DMTH6016LFDFWQ-7R by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, DMTH6016LFDFWQ-7R ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.06W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
- Package / Case: 6-UDFN Exposed Pad
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