AUIRF3205
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 75A TO220AB
$4.36
Available to order
Reference Price (USD)
1+
$3.12000
50+
$2.51800
100+
$2.26610
500+
$1.76254
1,000+
$1.46038
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance AUIRF3205 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, AUIRF3205 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SI2333CDS-T1-GE3
Microchip Technology
VN2222LL-G-P013
Taiwan Semiconductor Corporation
TSM160N10LCR RLG
Microchip Technology
TP2535N3-G
Vishay Siliconix
SIR416DP-T1-GE3
IXYS
IXTN660N04T4
Toshiba Semiconductor and Storage
TK6A55DA(STA4,Q,M)
Infineon Technologies
IPB60R080P7ATMA1
IXYS
IXTP34N65X2
Renesas Electronics America Inc