BCR119SH6433XTMA1
Infineon Technologies
Infineon Technologies
TRANS 2NPN PREBIAS 0.25W SOT363
$0.10
Available to order
Reference Price (USD)
20,000+
$0.05326
Exquisite packaging
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Maximize circuit reliability with Infineon Technologies's BCR119SH6433XTMA1 Pre-Biased Transistor Arrays, the smart choice for modern electronic designs. These BJT arrays combine multiple transistors with bias networks in single packages, offering space savings and improved thermal characteristics. Target applications span from portable electronics to industrial automation systems, particularly where stable amplification and fast switching are required. Key benefits include reduced component count, simplified assembly processes, and enhanced signal integrity. Infineon Technologies maintains strict quality control measures for all discrete semiconductor products. Interested in BCR119SH6433XTMA1 specifications or evaluation boards? Complete our brief inquiry form for prompt response!
Specifications
- Product Status: Not For New Designs
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 150MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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