BCR185SH6327
Infineon Technologies
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
$0.06
Available to order
Reference Price (USD)
1+
$0.06000
500+
$0.0594
1000+
$0.0588
1500+
$0.0582
2000+
$0.0576
2500+
$0.057
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience precision engineering with Infineon Technologies's BCR185SH6327 Bipolar Junction Transistor Arrays, the optimal solution for space-efficient designs. These pre-biased components eliminate external resistor needs while providing predictable performance in amplification and switching roles. Application sectors include automotive electronics, power tools, and renewable energy systems where reliability is paramount. The product family offers multiple configuration options, all featuring low quiescent current, high gain bandwidth product, and robust EMC performance. Infineon Technologies provides comprehensive technical resources for BCR185SH6327 integration. Take the next step request a quote or design consultation through our convenient inquiry portal!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 200MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
Related Products
Panasonic Electronic Components
UP0339700L
onsemi
NSBA123JDP6T5G
Panasonic Electronic Components
UP03397G0L
onsemi
NSM21356DW6T1G
Nexperia USA Inc.
PEMH4,115
Rohm Semiconductor
UMH33NTN
onsemi
SMUN5115DW1T1G
onsemi
UMC3NT1G
Toshiba Semiconductor and Storage
RN4985,LXHF(CT
Rohm Semiconductor