MT3S20TU(TE85L)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ UFM
$0.00
Available to order
Reference Price (USD)
3,000+
$0.17903
6,000+
$0.16748
15,000+
$0.15593
30,000+
$0.15400
Exquisite packaging
Discount
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Engineered for excellence, Toshiba Semiconductor and Storage's MT3S20TU(TE85L) transistors redefine RF performance in the Bipolar (BJT) category. Ideal for VHF/UHF systems, these devices provide exceptional gain-bandwidth product and phase stability. Applications span from broadcast transmitters to automotive radar. Partner with us for quality components contact our sales team for personalized assistance!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.45dB @ 20mA, 5V
- Gain: 12dB
- Power - Max: 900mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: UFM
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