BFP840FESDH6327XTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 2.6V 85GHZ 4TSFP
$0.58
Available to order
Reference Price (USD)
3,000+
$0.17870
6,000+
$0.16843
15,000+
$0.15816
30,000+
$0.15097
75,000+
$0.14789
Exquisite packaging
Discount
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Discover high-performance BFP840FESDH6327XTSA1 RF Bipolar Transistors from Infineon Technologies, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.6V
- Frequency - Transition: 85GHz
- Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
- Gain: 35dB
- Power - Max: 75mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: PG-TSFP-4-1
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