BFR181WE6327
Infineon Technologies
Infineon Technologies
LOW-NOISE TRANSISTOR
$0.09
Available to order
Reference Price (USD)
1+
$0.09000
500+
$0.0891
1000+
$0.0882
1500+
$0.0873
2000+
$0.0864
2500+
$0.0855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Simplify your RF design challenges with BFR181WE6327 from Infineon Technologies. These BJT transistors offer consistent hFE matching and low saturation voltage, essential for push-pull configurations and mixer circuits. Serving industries from marine navigation to renewable energy. Connect with our team we provide end-to-end support from selection to delivery!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
- Gain: 19dB
- Power - Max: 175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
Related Products
NTE Electronics, Inc
NTE311
NTE Electronics, Inc
NTE329
Renesas
NESG270034-T1-AZ
NXP USA Inc.
ON5089,115
Renesas
NE85633-T1B-A
Infineon Technologies
BFP620FH7764XTSA1
onsemi
NSVF6001SB6T1G
NXP USA Inc.
BFU550AVL
NXP USA Inc.
BFG505/X,215
CEL