NTE329
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 30V TO39
$2.40
Available to order
Reference Price (USD)
1+
$2.40000
500+
$2.376
1000+
$2.352
1500+
$2.328
2000+
$2.304
2500+
$2.28
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF designs with NTE Electronics, Inc's NTE329 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how NTE329 can enhance your projects!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: 5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 400mA, 2V
- Current - Collector (Ic) (Max): 1A
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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