NESG270034-T1-AZ
Renesas
Renesas
NPN SILICON MEDIUM POWER TRANSIS
$2.40
Available to order
Reference Price (USD)
1+
$2.40000
500+
$2.376
1000+
$2.352
1500+
$2.328
2000+
$2.304
2500+
$2.28
Exquisite packaging
Discount
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Renesas's NESG270034-T1-AZ RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 9.2V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 19.5dB
- Power - Max: 1.9W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
- Current - Collector (Ic) (Max): 750mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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