BFR750L3RHE6327
Infineon Technologies
Infineon Technologies
RF BIPOLAR TRANSISTOR
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
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Upgrade your RF designs with Infineon Technologies's BFR750L3RHE6327 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how BFR750L3RHE6327 can enhance your projects!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 37GHz
- Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
- Gain: 21dB
- Power - Max: 360mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
- Current - Collector (Ic) (Max): 90mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3
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