BFR93AWE6327
Infineon Technologies
Infineon Technologies
RF BIPOLAR TRANSISTOR
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Engineered for excellence, Infineon Technologies's BFR93AWE6327 transistors redefine RF performance in the Bipolar (BJT) category. Ideal for VHF/UHF systems, these devices provide exceptional gain-bandwidth product and phase stability. Applications span from broadcast transmitters to automotive radar. Partner with us for quality components contact our sales team for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 6GHz
- Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
- Gain: 10.5dB ~ 15.5dB
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 90mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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