MX0912B251Y
Rochester Electronics, LLC
Rochester Electronics, LLC
MX0912B251Y - NPN SILICON RF POW
$249.60
Available to order
Reference Price (USD)
1+
$249.60000
500+
$247.104
1000+
$244.608
1500+
$242.112
2000+
$239.616
2500+
$237.12
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Rochester Electronics, LLC presents MX0912B251Y: The go-to RF BJT transistor for low-power, high-frequency designs. Its standout features like controlled beta variation and hermetic packaging make it a favorite among telecom engineers. From RFID readers to test equipment, versatility meets precision. Get started request samples or datasheets via our quick-response form!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 60V
- Frequency - Transition: 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB
- Power - Max: 690W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 15A
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-439A
- Supplier Device Package: CDFM2
Related Products
Renesas Electronics America Inc
UPA901TU-T3-A
Renesas Electronics America Inc
NESG2031M05-T1-A
Fairchild Semiconductor
KSC1393YTA
Infineon Technologies
BFP 405 H6740
Microchip Technology
2N3497
Renesas Electronics America Inc
NESG2101M05-T1-A
Microchip Technology
2N3495
onsemi
2SC5231C9-TL-E
Infineon Technologies
BF799
Renesas Electronics America Inc